Hotspot induced by low-power microwave drill transistor-based localized heaters and their new applications

Yehuda Meir, Alon Salzberg, Eli Jerby

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper explores the microwave self-focusing effect in the low-power limit, and examines the feasibility of transistor-based microwave-drills and their new applications. A theoretical model of the locally induced thermal-runaway instability is employed in the power range of 10-100 W in order to find the minimal conditions for the hotspot evolution. The drillability factor is defined as a heuristic estimate for the minimal power needed to induce hotspots in specific materials. A practical transistor-based microwave-drill scheme is introduced for delicate operations. Variants of this device are proposed for other applications, like local melting, ignition, indentation, plasma generation, and material identification by microwave induced breakdown spectroscopy (MIBS).

Original languageEnglish
Title of host publicationMicrowave and RF Power Applications
Subtitle of host publicationProceeding of the 13th International Conference on Microwave and Radio Frequency Heating, AMPERE 2011
Pages211-214
Number of pages4
StatePublished - 2011
Event13th International Conference on Microwave and Radio Frequency Heating, AMPERE 2011 - Toulouse, France
Duration: 5 Sep 20118 Sep 2011

Publication series

NameMicrowave and RF Power Applications: Proceeding of the 13th International Conference on Microwave and Radio Frequency Heating, AMPERE 2011

Conference

Conference13th International Conference on Microwave and Radio Frequency Heating, AMPERE 2011
Country/TerritoryFrance
CityToulouse
Period5/09/118/09/11

Keywords

  • Hotspots
  • Microwave drills
  • Microwave focusing

All Science Journal Classification (ASJC) codes

  • Radiation

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