High-ZT Due to the Influence of Copper in Ti(Ni1-xCux)Sn

Yatir Sadia; Dan Lumbroso; Yaniv Gelbstein

doi:https://doi.org/10.3390/ma16051902

High-ZT Due to the Influence of Copper in Ti(Ni_1-xCu_x)Sn

Yatir Sadia, Dan Lumbroso, Yaniv Gelbstein

Department of Materials Engineering

Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

Most high-performance thermoelectric materials require either expensive, rare, or toxic elements. By doping TiNiSn, a low-cost, abundant thermoelectric compound, with copper as an n-type donor, some optimization can be performed for such materials. Ti(Ni_1-xCu_x)Sn was synthesized by arc melting followed by heat treatment and hot pressing. The resulting material was analyzed for its phases using XRD and SEM and its transport properties. Cu undoped and 0.05/0.1% doped samples showed no additional phases in addition to the matrix half-Heusler phase, while the 1% copper doping initiated some Ti₆Sn₅ and Ti₅Sn₃ precipitation. The transport properties showed that copper acts as an n-type donor while also lowing the lattice thermal conductivity of the materials. the sample containing 0.1% copper showed the best figure of merit, ZT, with a maximal value of 0.75 and an average value of 0.5 through 325–750 K showing a 125% improvement over the undoped sample of TiNiSn.

Original language	English
Article number	1902
Journal	Materials
Volume	16
Issue number	5
DOIs	https://doi.org/10.3390/ma16051902
State	Published - 1 Mar 2023

Keywords

TiNiSn
arc melting
half-Heusler
thermoelectric

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Materials Science(all)

Access to Document

https://doi.org/10.3390/ma16051902

Cite this

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title = "High-ZT Due to the Influence of Copper in Ti(Ni1-xCux)Sn",

abstract = "Most high-performance thermoelectric materials require either expensive, rare, or toxic elements. By doping TiNiSn, a low-cost, abundant thermoelectric compound, with copper as an n-type donor, some optimization can be performed for such materials. Ti(Ni1-xCux)Sn was synthesized by arc melting followed by heat treatment and hot pressing. The resulting material was analyzed for its phases using XRD and SEM and its transport properties. Cu undoped and 0.05/0.1% doped samples showed no additional phases in addition to the matrix half-Heusler phase, while the 1% copper doping initiated some Ti6Sn5 and Ti5Sn3 precipitation. The transport properties showed that copper acts as an n-type donor while also lowing the lattice thermal conductivity of the materials. the sample containing 0.1% copper showed the best figure of merit, ZT, with a maximal value of 0.75 and an average value of 0.5 through 325–750 K showing a 125% improvement over the undoped sample of TiNiSn.",

keywords = "TiNiSn, arc melting, half-Heusler, thermoelectric",

author = "Yatir Sadia and Dan Lumbroso and Yaniv Gelbstein",

note = "Funding Information: This research was funded by the Israel Science Foundation (ISF), Grant no. 326/20. Publisher Copyright: {\textcopyright} 2023 by the authors.",

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AU - Sadia, Yatir

AU - Lumbroso, Dan

AU - Gelbstein, Yaniv

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N2 - Most high-performance thermoelectric materials require either expensive, rare, or toxic elements. By doping TiNiSn, a low-cost, abundant thermoelectric compound, with copper as an n-type donor, some optimization can be performed for such materials. Ti(Ni1-xCux)Sn was synthesized by arc melting followed by heat treatment and hot pressing. The resulting material was analyzed for its phases using XRD and SEM and its transport properties. Cu undoped and 0.05/0.1% doped samples showed no additional phases in addition to the matrix half-Heusler phase, while the 1% copper doping initiated some Ti6Sn5 and Ti5Sn3 precipitation. The transport properties showed that copper acts as an n-type donor while also lowing the lattice thermal conductivity of the materials. the sample containing 0.1% copper showed the best figure of merit, ZT, with a maximal value of 0.75 and an average value of 0.5 through 325–750 K showing a 125% improvement over the undoped sample of TiNiSn.

AB - Most high-performance thermoelectric materials require either expensive, rare, or toxic elements. By doping TiNiSn, a low-cost, abundant thermoelectric compound, with copper as an n-type donor, some optimization can be performed for such materials. Ti(Ni1-xCux)Sn was synthesized by arc melting followed by heat treatment and hot pressing. The resulting material was analyzed for its phases using XRD and SEM and its transport properties. Cu undoped and 0.05/0.1% doped samples showed no additional phases in addition to the matrix half-Heusler phase, while the 1% copper doping initiated some Ti6Sn5 and Ti5Sn3 precipitation. The transport properties showed that copper acts as an n-type donor while also lowing the lattice thermal conductivity of the materials. the sample containing 0.1% copper showed the best figure of merit, ZT, with a maximal value of 0.75 and an average value of 0.5 through 325–750 K showing a 125% improvement over the undoped sample of TiNiSn.

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