Abstract
This article reports on the high-temperature (HT) operation (25 °C-400 °C) and temperature sensing mechanism of a depletion-mode AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistor (depletion mode (D-mode) AlGaN/GaN MIS-HEMT) in GaN on Si technology. Our measurements and simulations show that the high sensitivity of the device is governed by traps at the GaN-cap/Si3N4 interface and in the GaN buffer layer. At subthreshold operation, the device temperature sensitivity reaches 8.73%/K at a drain-to-source current ( ${I}_{\mathrm{DS}}$ ) of 10 $\mu \text{A}$ /mm. This is similar to the values reported for silicon devices, but in a much wider temperature range and at much higher current densities.
Original language | English |
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Pages (from-to) | 5695-5700 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 11 |
DOIs | |
State | Published - 1 Nov 2021 |
Keywords
- 2-D electron gas (2DEG) temperature sensor
- AlGaN/GaN-HEMT
- metal-insulator-semiconductor (MIS)-HEMT
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering