High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Domenico De Fazio; David G. Purdie; Anna K. Ott; Philipp Braeuninger-Weimer; Timofiy Khodkov; Stijn Goossens; Takashi Taniguchi; Kenji Watanabe; Patrizia Livreri; Frank H. L. Koppens; Stephan Hofmann; Ilya Goykhman; Andrea C. Ferrari; Antonio Lombardo

doi:https://doi.org/10.1021/acsnano.9b02621

High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Domenico De Fazio, David G. Purdie, Anna K. Ott, Philipp Braeuninger-Weimer, Timofiy Khodkov, Stijn Goossens, Takashi Taniguchi, Kenji Watanabe, Patrizia Livreri, Frank H. L. Koppens, Stephan Hofmann, Ilya Goykhman, Andrea C. Ferrari, Antonio Lombardo

Research output: Contribution to journal › Article › peer-review

Abstract

We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO₂ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm² V^-1 s^-1 at room temperature and ∼120...000 cm² V^-1 s^-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30...000 cm² V^-1 s^-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10...000 cm² V^-1 s^-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

Original language	English
Pages (from-to)	8926-8935
Number of pages	10
Journal	ACS Nano
Volume	13
Issue number	8
DOIs	https://doi.org/10.1021/acsnano.9b02621
State	Published - 27 Aug 2019
Externally published	Yes

Keywords

CVD
charge carrier mobility
graphene
heterostructures
transfer

All Science Journal Classification (ASJC) codes

General Engineering
General Materials Science
General Physics and Astronomy

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title = "High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition",

abstract = "We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120...000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30...000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10...000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.",

keywords = "CVD, charge carrier mobility, graphene, heterostructures, transfer",

author = "{De Fazio}, Domenico and Purdie, {David G.} and Ott, {Anna K.} and Philipp Braeuninger-Weimer and Timofiy Khodkov and Stijn Goossens and Takashi Taniguchi and Kenji Watanabe and Patrizia Livreri and Koppens, {Frank H. L.} and Stephan Hofmann and Ilya Goykhman and Ferrari, {Andrea C.} and Antonio Lombardo",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = aug,

day = "27",

doi = "https://doi.org/10.1021/acsnano.9b02621",

language = "الإنجليزيّة",

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journal = "ACS Nano",

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TY - JOUR

T1 - High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

AU - De Fazio, Domenico

AU - Purdie, David G.

AU - Ott, Anna K.

AU - Braeuninger-Weimer, Philipp

AU - Khodkov, Timofiy

AU - Goossens, Stijn

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Livreri, Patrizia

AU - Koppens, Frank H. L.

AU - Hofmann, Stephan

AU - Goykhman, Ilya

AU - Ferrari, Andrea C.

AU - Lombardo, Antonio

PY - 2019/8/27

Y1 - 2019/8/27

N2 - We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120...000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30...000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10...000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

AB - We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120...000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30...000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10...000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

KW - CVD

KW - charge carrier mobility

KW - graphene

KW - heterostructures

KW - transfer

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U2 - https://doi.org/10.1021/acsnano.9b02621

DO - https://doi.org/10.1021/acsnano.9b02621

M3 - مقالة

C2 - 31322332

SN - 1936-0851

VL - 13

SP - 8926

EP - 8935

JO - ACS Nano

JF - ACS Nano

IS - 8

ER -

High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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