High-frequency electromechanical resonators based on thin GaTe

Basant Chitara, Assaf Ya'Akobovitz

Research output: Contribution to journalArticlepeer-review


Gallium telluride (GaTe) is a layered material, which exhibits a direct bandgap (∼1.65 eV) regardless of its thickness and therefore holds great potential for integration as a core element in stretchable optomechanical and optoelectronic devices. Here, we characterize and demonstrate the elastic properties and electromechanical resonators of suspended thin GaTe nanodrums. We used atomic force microscopy to extract the Young's modulus of GaTe (average value ∼39 GPa) and to predict the resonance frequencies of suspended GaTe nanodrums of various geometries. Electromechanical resonators fabricated from suspended GaTe revealed fundamental resonance frequencies in the range of 10-25 MHz, which closely match predicted values. Therefore, this study paves the way for creating a new generation of GaTe based nanoelectromechanical devices with a direct bandgap vibrating element, which can serve as optomechanical sensors and actuators.

Original languageAmerican English
Article number42LT02
Issue number42
StatePublished - 25 Sep 2017


  • Young's modulus
  • elastic properties
  • electromechanical reosonators

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Mechanics of Materials
  • Mechanical Engineering
  • Bioengineering
  • Electrical and Electronic Engineering
  • General Materials Science


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