Hetero-twinning in chemical epitaxy of PBS thin films on GaAs substrates

Anna Osherov, Vladimir Ezersky, Yuval Golan

Research output: Contribution to journalArticlepeer-review


Twinning, i.e., inversion of atomic stacking sequence along a specific crystallographic axis, is a commonly occurring phenomenon in thin film growth. A very large number of reports have shown cases of conventional twinning within a single polycrystalline phase, where the plane of contact between the two twinned parts, called the composition plane, coincided with the twinning plane. Here we show for the first time twinning in heteroepitaxial monocrystalline PbS semiconductor thin films that are deposited from aqueous solutions under ambient conditions. The chemically deposited films show a distinct, well-defined "hetero-twin relationship with monocrystalline GaAs substrates of various orientations: (100), (111), and (110). Notably, the same twin relationship, with the (111) twin plane and [112̄] twinning direction was observed in all studied cases regardless of the composition plane.

Original languageAmerican English
Pages (from-to)4006-4011
Number of pages6
JournalCrystal Growth and Design
Issue number8
StatePublished - 1 Aug 2012

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Materials Science


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