Helical edge resistance introduced by charge puddles

Jukka I. Väyrynen; Moshe Goldstein; Leonid I. Glazman

doi:10.1103/PhysRevLett.110.216402

Helical edge resistance introduced by charge puddles

Jukka I. Väyrynen, Moshe Goldstein, Leonid I. Glazman

Research output: Contribution to journal › Article › peer-review

Abstract

We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.

Original language	English
Article number	216402
Journal	Physical Review Letters
Volume	110
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.110.216402
State	Published - 21 May 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.110.216402

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abstract = "We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.",

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N2 - We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.

AB - We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.

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Helical edge resistance introduced by charge puddles

Abstract

All Science Journal Classification (ASJC) codes

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