Heat dissipation mechanisms in resistive switching devices

E. Yalon; D. Ritter; I. Riess

doi:https://doi.org/10.1109/NVMTS.2013.6851051

Heat dissipation mechanisms in resistive switching devices

E. Yalon, D. Ritter, I. Riess

Technion - Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations to the measured temperatures. The simulations are consistent with our experimental data for a filament tip diameter of ∼1nm.

Original language	English
Title of host publication	13th Non-Volatile Memory Technology Symposium, NVMTS 2013
DOIs	https://doi.org/10.1109/NVMTS.2013.6851051
State	Published - 2013
Event	13th Non-Volatile Memory Technology Symposium, NVMTS 2013 - Minneapolis, MN, United States Duration: 12 Aug 2013 → 14 Aug 2013

Publication series

Name	13th Non-Volatile Memory Technology Symposium, NVMTS 2013

Conference

Conference	13th Non-Volatile Memory Technology Symposium, NVMTS 2013
Country/Territory	United States
City	Minneapolis, MN
Period	12/08/13 → 14/08/13

Keywords

Joule heating
RRAM
bipolar transistor
conductive filaments
resistive switching

All Science Journal Classification (ASJC) codes

Hardware and Architecture

Access to Document

https://doi.org/10.1109/NVMTS.2013.6851051

Cite this

@inproceedings{e8662a304bc34a6e9253a913c409def4,

title = "Heat dissipation mechanisms in resistive switching devices",

abstract = "The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations to the measured temperatures. The simulations are consistent with our experimental data for a filament tip diameter of ∼1nm.",

keywords = "Joule heating, RRAM, bipolar transistor, conductive filaments, resistive switching",

author = "E. Yalon and D. Ritter and I. Riess",

year = "2013",

doi = "https://doi.org/10.1109/NVMTS.2013.6851051",

language = "الإنجليزيّة",

isbn = "9781479941100",

series = "13th Non-Volatile Memory Technology Symposium, NVMTS 2013",

booktitle = "13th Non-Volatile Memory Technology Symposium, NVMTS 2013",

note = "13th Non-Volatile Memory Technology Symposium, NVMTS 2013 ; Conference date: 12-08-2013 Through 14-08-2013",

}

Yalon, E, Ritter, D & Riess, I 2013, Heat dissipation mechanisms in resistive switching devices. in 13th Non-Volatile Memory Technology Symposium, NVMTS 2013., 6851051, 13th Non-Volatile Memory Technology Symposium, NVMTS 2013, 13th Non-Volatile Memory Technology Symposium, NVMTS 2013, Minneapolis, MN, United States, 12/08/13. https://doi.org/10.1109/NVMTS.2013.6851051

TY - GEN

T1 - Heat dissipation mechanisms in resistive switching devices

AU - Yalon, E.

AU - Ritter, D.

AU - Riess, I.

PY - 2013

Y1 - 2013

N2 - The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations to the measured temperatures. The simulations are consistent with our experimental data for a filament tip diameter of ∼1nm.

AB - The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations to the measured temperatures. The simulations are consistent with our experimental data for a filament tip diameter of ∼1nm.

KW - Joule heating

KW - RRAM

KW - bipolar transistor

KW - conductive filaments

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=84905396935&partnerID=8YFLogxK

U2 - https://doi.org/10.1109/NVMTS.2013.6851051

DO - https://doi.org/10.1109/NVMTS.2013.6851051

M3 - منشور من مؤتمر

SN - 9781479941100

T3 - 13th Non-Volatile Memory Technology Symposium, NVMTS 2013

BT - 13th Non-Volatile Memory Technology Symposium, NVMTS 2013

T2 - 13th Non-Volatile Memory Technology Symposium, NVMTS 2013

Y2 - 12 August 2013 through 14 August 2013

ER -

Heat dissipation mechanisms in resistive switching devices

Abstract

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Conference

Keywords

All Science Journal Classification (ASJC) codes

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