Abstract
Perfectly aligned horizontal ZnSe nanowires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 3999-4005 |
| Number of pages | 7 |
| Journal | Advanced Materials |
| Volume | 27 |
| Issue number | 27 |
| DOIs | |
| State | Published - 15 Jul 2015 |
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science
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