Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction

Gertjan Koster, Yorick Birkhölzer, Mark Huijben, Guus Rijnders, Matjaž Spreitzer, Lior Kornblum, Sander Smink

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a real-time rate-monitoring technique as well as methods to study the nucleation and growth during PLD are briefly discussed. After a brief introduction of RHEED, a case will be made for the step-density model to describe the intensity variations encountered during deposition. An overview of the intensity variations, the intensity response during a RHEED experiment because of various initial growth modes, of the LaAlO3/SrTiO3, SrRuO3/SrTiO3, and YBa2Cu3O7/SrTiO3 systems will be given, focusing on the role of the chemical terminations of the starting growth surface. In addition to the growth on oxide single crystal, RHEED was used extensively to study the growth of oxide (buffer) layers on Si and other semiconductors. Finally, RHEED can be used postdeposition to reveal various properties of the as-deposited thin film.

Original languageEnglish
Title of host publicationEpitaxial Growth of Complex Metal Oxides
Number of pages34
ISBN (Electronic)9780081029459
ISBN (Print)9780081029466
StatePublished - 1 Jan 2022

Publication series

NameWoodhead Publishing Series in Electronic and Optical Materials


  • Electron diffraction
  • Step density model
  • Thin film growth modes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Materials Science


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