From contact to diffusion controlled growth of nickel silicides in silicon nanowires

Engineering & Materials Science

• Silicides 100%
• Nanowires 90%
• Nickel 68%
• Silicon 57%
• Atoms 18%
• Field effect transistors 13%
• Rapid thermal annealing 9%
• Surface diffusion 9%
• Kinetic parameters 7%
• Transmission electron microscopy 6%
• Annealing 6%
• Nitrogen 5%
• Temperature 4%
• Electrodes 4%
• Acoustic impedance 4%

Physics & Astronomy

• silicides 75%
• nanowires 58%
• nickel 58%
• silicon 39%
• intrusion 32%
• field effect transistors 9%
• atoms 9%
• annealing 7%
• kinetics 7%
• surface diffusion 6%
• electrical resistance 6%
• time dependence 5%
• nitrogen 4%
• atmospheres 4%
• transmission electron microscopy 3%
• electrodes 3%
• temperature 3%

Chemistry

• Nanowire 63%
• Diffusion 45%
• Rapid Thermal Annealing 9%
• Schottky Barrier 9%
• Surface Diffusion 8%
• Length 7%
• Electrical Resistance 7%
• Field Effect 6%
• Annealing 5%
• Pharmacokinetics 5%
• Time 4%
• Nitrogen 4%
• Behavior as Electrode 3%