Formation of Pd₂Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd₂Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd₂Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.