Fin-fet gain cells

Adam Teman (Inventor), Amir Shalom (Inventor), Robert Giterman (Inventor), Alexander Fish (Inventor)

Research output: Patent

Abstract

A FinFET gain cell includes a write port, read port and storage node. The write port includes at least one write FinFET transistor and has write word-line (WWL) and write bit-line (WBL) inputs. The read port includes at least one FinFET read transistor and has a read word-line (RWL) input and a read bit-line (RBL) output. The storage node stores a data level written from said WBL. The storage nodes includes a single layer interconnect which connects the write port output diffusion connection to the read port input gate connection. The height of the single layer interconnect at the write port output diffusion connection is different from the height of the single layer interconnect at the read port input gate connection.
Original languageEnglish
Patent numberUS20210166751A1
IPCG11C11/4096
StatePublished - 3 Jun 2021

Cite this