Abstract
We consider the effect of metal electrodes on the polarizability and nucleation of metal phases responsible for the operations of the emerging solid-state memory. Our analysis is based on the image-charge approach. We find results for point dipoles in static and oscillatory fields as well as an erect cylindrical nucleus near metal surfaces in resistive switching memories. We predict a large increase in polarizability and nucleation rate due to the metal electrode effects.
Original language | English |
---|---|
Article number | 044004 |
Journal | Physical Review Applied |
Volume | 3 |
Issue number | 4 |
DOIs | |
State | Published - 10 Apr 2015 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy