Field-effect transistors based on WS2 nanotubes with high current-carrying capacity

Roi Levi; Ora Bitton; Gregory Leitus; Reshef Tenne; Ernesto Joselevich

doi:10.1021/nl401675k

Field-effect transistors based on WS₂ nanotubes with high current-carrying capacity

Roi Levi, Ora Bitton, Gregory Leitus, Reshef Tenne, Ernesto Joselevich

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

Abstract

We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm² V^-1 s^-1 for an individual WS₂ nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 10⁸ A cm^-2. These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.

Original language	English
Pages (from-to)	3736-3741
Number of pages	6
Journal	Nano Letters
Volume	13
Issue number	8
DOIs	https://doi.org/10.1021/nl401675k
State	Published - 14 Aug 2013

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Materials Science

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10.1021/nl401675k

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title = "Field-effect transistors based on WS2 nanotubes with high current-carrying capacity",

abstract = "We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm2 V-1 s-1 for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 108 A cm-2. These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.",

author = "Roi Levi and Ora Bitton and Gregory Leitus and Reshef Tenne and Ernesto Joselevich",

note = "Israel Science Foundation; Harold Perlman Foundation; Carolito Stiftung; Irving Foundation; Azelle Waltcher FoundationWe thank Dr. Maya Bar-Sadan and Dr. Lothar Houben for the helpful discussions. We are grateful for the support of the following agencies: the Israel Science Foundation, the Harold Perlman Foundation, the Carolito Stiftung, and the Irving and Azelle Waltcher Foundations. R.T. is the director of the Helen and Martin Kimmel Center for Nanoscale Science and the Drake Family chair in nanotechnology.",

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month = aug,

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doi = "10.1021/nl401675k",

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T1 - Field-effect transistors based on WS2 nanotubes with high current-carrying capacity

AU - Levi, Roi

AU - Bitton, Ora

AU - Leitus, Gregory

AU - Tenne, Reshef

AU - Joselevich, Ernesto

N1 - Israel Science Foundation; Harold Perlman Foundation; Carolito Stiftung; Irving Foundation; Azelle Waltcher FoundationWe thank Dr. Maya Bar-Sadan and Dr. Lothar Houben for the helpful discussions. We are grateful for the support of the following agencies: the Israel Science Foundation, the Harold Perlman Foundation, the Carolito Stiftung, and the Irving and Azelle Waltcher Foundations. R.T. is the director of the Helen and Martin Kimmel Center for Nanoscale Science and the Drake Family chair in nanotechnology.

PY - 2013/8/14

Y1 - 2013/8/14

N2 - We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm2 V-1 s-1 for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 108 A cm-2. These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.

AB - We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm2 V-1 s-1 for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 108 A cm-2. These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.

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EP - 3741

JO - Nano Letters

JF - Nano Letters

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ER -

Field-effect transistors based on WS₂ nanotubes with high current-carrying capacity

Abstract

All Science Journal Classification (ASJC) codes

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