Field-effect transistors based on WS2 nanotubes with high current-carrying capacity

Roi Levi, Ora Bitton, Gregory Leitus, Reshef Tenne, Ernesto Joselevich

Research output: Contribution to journalArticlepeer-review

Abstract

We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm2 V-1 s-1 for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 108 A cm-2. These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.

Original languageEnglish
Pages (from-to)3736-3741
Number of pages6
JournalNano Letters
Volume13
Issue number8
DOIs
StatePublished - 14 Aug 2013

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Materials Science

Fingerprint

Dive into the research topics of 'Field-effect transistors based on WS2 nanotubes with high current-carrying capacity'. Together they form a unique fingerprint.

Cite this