Abstract
We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm2 V-1 s-1 for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 108 A cm-2. These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.
Original language | English |
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Pages (from-to) | 3736-3741 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 13 |
Issue number | 8 |
DOIs | |
State | Published - 14 Aug 2013 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Mechanical Engineering
- Bioengineering
- General Materials Science