Ferroelectricity in layered bismuth oxide down to 1 nanometer

Qianqian Yang, Jingcong Hu, Yue Wen Fang, Yueyang Jia, Rui Yang, Shiqing Deng, Yue Lu, Oswaldo Dieguez, Longlong Fan, Dongxing Zheng, Xixiang Zhang, Yongqi Dong, Zhenlin Luo, Zhen Wang, Huanhua Wang, Manling Sui, Xianran Xing, Jun Chen, Jianjun Tian, Linxing Zhang

Research output: Contribution to journalArticlepeer-review


Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair–driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

Original languageEnglish
Pages (from-to)1218-1224
Number of pages7
Issue number6638
StatePublished - 24 Mar 2023

All Science Journal Classification (ASJC) codes

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