Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

A. Vardi, S. Sakr, J. Mangeney, P. K. Kandaswamy, E. Monroy, M. Tchernycheva, S. E. Schacham, F. H. Julien, G. Bahir

Research output: Contribution to journalArticlepeer-review

Abstract

The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated that the intrinsic speed limitation, governed by the carrier transit time, is smaller than 1 ps, corresponding to a frequency cut off above 200 GHz.
Original languageEnglish
Article number202111
Pages (from-to)202111
JournalApplied Physics Letters
Volume99
Issue number20
DOIs
StatePublished - 1 Nov 2011

Keywords

  • Bolometers
  • III-V semiconductors
  • aluminium compounds
  • gallium compounds
  • infrared detectors
  • infrared submillimeter wave microwave and radiowave receivers and detectors
  • semiconductor quantum wells
  • wide band gap semiconductors

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron'. Together they form a unique fingerprint.

Cite this