@inproceedings{96ba1c29ae74473a8b76e951e3ef5205,
title = "Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design",
abstract = "Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as attractive technology that respond to market trends in mobile applications. Digital subthreshold design techniques allow to operate at the minimum energy point, thus leading to considerable energy savings. In this work, the impact of back biasing is analyzed for the subthreshold region with different threshold voltage device options. We show that back biasing is an effective knob to achieve the minimum energy point when either high or low performance is demanded. By applying forward back bias voltage of 1.5 V to low threshold voltage transistors we achieved a frequency boost by 8.23× while maintaining the same consumed energy per cycle. Using regular threshold voltage transistors reversed back biased by 1.5 V, the leakage current was reduced 13.5x. Furthermore, we show that a single p-well approach should be used when no back biasing is needed in the subthreshold regime.",
keywords = "28nm UTBB FD-SOI, Back biasing, Single Well, Subthreshold digital design",
author = "Ramiro Taco and Itamar Levi and Alex Fish and Marco Lanuzza",
note = "Publisher Copyright: {\textcopyright} Copyright 2015 IEEE All rights reserved.; 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 ; Conference date: 03-12-2014 Through 05-12-2014",
year = "2014",
month = jan,
day = "1",
doi = "https://doi.org/10.1109/eeei.2014.7005822",
language = "الإنجليزيّة",
series = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",
address = "الولايات المتّحدة",
}
