Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

Igor Krylov; Lior Kornblum; Arkady Gavrilov; Dan Ritter; Moshe Eizenberg

doi:10.1063/1.4704925

Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

Igor Krylov, Lior Kornblum, Arkady Gavrilov, Dan Ritter, Moshe Eizenberg

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E _A) for weak inversion C-V humps and parallel conductance peaks in Al ₂O ₃/InGaAs and Si ₃N ₄/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In _0.53Ga _0.47As) were obtained for E _A of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation- recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (D _it) and can be used as a characterization tool for dielectric/InGaAs systems.

Original language	English
Article number	173508
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4704925
State	Published - 23 Apr 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4704925

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@article{57a6fa2056804d56b6cc78c71c776a06,

title = "Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces",

abstract = "Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E A) for weak inversion C-V humps and parallel conductance peaks in Al 2O 3/InGaAs and Si 3N 4/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In 0.53Ga 0.47As) were obtained for E A of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation- recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (D it) and can be used as a characterization tool for dielectric/InGaAs systems.",

author = "Igor Krylov and Lior Kornblum and Arkady Gavrilov and Dan Ritter and Moshe Eizenberg",

note = "Funding Information: The authors acknowledge the Russell Berrie Nanotechnology Institute (RBNI) at the Technion for financial support and Shimon Cohen and Sivan Fadida for technical support.",

year = "2012",

month = apr,

day = "23",

doi = "10.1063/1.4704925",

language = "الإنجليزيّة",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

AU - Krylov, Igor

AU - Kornblum, Lior

AU - Gavrilov, Arkady

AU - Ritter, Dan

AU - Eizenberg, Moshe

N1 - Funding Information: The authors acknowledge the Russell Berrie Nanotechnology Institute (RBNI) at the Technion for financial support and Shimon Cohen and Sivan Fadida for technical support.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E A) for weak inversion C-V humps and parallel conductance peaks in Al 2O 3/InGaAs and Si 3N 4/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In 0.53Ga 0.47As) were obtained for E A of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation- recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (D it) and can be used as a characterization tool for dielectric/InGaAs systems.

AB - Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E A) for weak inversion C-V humps and parallel conductance peaks in Al 2O 3/InGaAs and Si 3N 4/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In 0.53Ga 0.47As) were obtained for E A of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation- recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (D it) and can be used as a characterization tool for dielectric/InGaAs systems.

UR - http://www.scopus.com/inward/record.url?scp=84860348381&partnerID=8YFLogxK

U2 - 10.1063/1.4704925

DO - 10.1063/1.4704925

M3 - مقالة

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173508

ER -

Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

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