Abstract
Epitaxial growth of the newly discovered metastable cubic tin sulfide (π-SnS) material was studied theoretically and experimentally. Lead sulfide (PbS) substrates possess a small lattice mismatch with π-SnS and are therefore suitable substrates for epitaxial growth. Very recently, epitaxial growth of π-SnS(111) on PbS(111) and π-SnS(110) on PbS(110) was reported. The interfacial energies of π-SnS(111) on PbS(111), as well as π-SnS(100) on PbS(100), were calculated and found to be smaller than their corresponding pristine surface energies, which give rise to the stable epitaxial growth of π-SnS on PbS. Moreover, we experimentally confirmed the epitaxial growth of π-SnS(100) onto PbS(100) as predicted by the theoretical results. These results establish the pathway of epitaxial growth of π-SnS compact thin films in desired orientations and thus bring their applications closer.
| Original language | American English |
|---|---|
| Pages (from-to) | 2301-2305 |
| Number of pages | 5 |
| Journal | Crystal Growth and Design |
| Volume | 23 |
| Issue number | 4 |
| DOIs | |
| State | Published - 5 Apr 2023 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics
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