Enhancement of near infrared light sensing using side-gate modulation

Avner Neubauer; Arthur Shapiro; Shira Yochelis; Eyal Capua; Ron Namman; Efrat Lifshitz; Yossi Paltiel

doi:https://doi.org/10.1016/j.sna.2017.09.042

Enhancement of near infrared light sensing using side-gate modulation

Avner Neubauer, Arthur Shapiro, Shira Yochelis, Eyal Capua, Ron Namman, Efrat Lifshitz, Yossi Paltiel

The Hebrew University of Jerusalem, Technion - Israel Institute of Technology, Weizmann Institute Of Science

Research output: Contribution to journal › Article › peer-review

Abstract

The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal–to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Sensors and Actuators, A: Physical
Volume	267
DOIs	https://doi.org/10.1016/j.sna.2017.09.042
State	Published - 1 Nov 2017

Keywords

AC modulation
IR detection
Quantum dots
Sensitivity
Side gate
Tunability

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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Cite this

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title = "Enhancement of near infrared light sensing using side-gate modulation",

abstract = "The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal–to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.",

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AU - Neubauer, Avner

AU - Shapiro, Arthur

AU - Yochelis, Shira

AU - Capua, Eyal

AU - Namman, Ron

AU - Lifshitz, Efrat

AU - Paltiel, Yossi

PY - 2017/11/1

Y1 - 2017/11/1

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AB - The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal–to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.

KW - AC modulation

KW - IR detection

KW - Quantum dots

KW - Sensitivity

KW - Side gate

KW - Tunability

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JO - Sensors and Actuators, A: Physical

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Enhancement of near infrared light sensing using side-gate modulation

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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