Enhancement in the performance of ultrathin hematite photoanode for water splitting by an oxide underlayer

Takashi Hisatomi; Hen Dotan; Morgan Stefik; Kevin Sivula; Avner Rothschild; Michaël Grätzel; Nripan Mathews

doi:10.1002/adma.201104868

Enhancement in the performance of ultrathin hematite photoanode for water splitting by an oxide underlayer

Takashi Hisatomi, Hen Dotan, Morgan Stefik, Kevin Sivula, Avner Rothschild, Michaël Grätzel, Nripan Mathews

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

A 2-nm thick Nb ₂O ₅ underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE.

Original language	English
Pages (from-to)	2699-2702
Number of pages	4
Journal	Advanced Materials
Volume	24
Issue number	20
DOIs	https://doi.org/10.1002/adma.201104868
State	Published - 22 May 2012

Keywords

electron back injection
hematite
niobium oxide
photoelectrochemical water splitting
underlayer

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201104868

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abstract = "A 2-nm thick Nb 2O 5 underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE.",

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AU - Hisatomi, Takashi

AU - Dotan, Hen

AU - Stefik, Morgan

AU - Sivula, Kevin

AU - Rothschild, Avner

AU - Grätzel, Michaël

AU - Mathews, Nripan

PY - 2012/5/22

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N2 - A 2-nm thick Nb 2O 5 underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE.

AB - A 2-nm thick Nb 2O 5 underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE.

KW - electron back injection

KW - hematite

KW - niobium oxide

KW - photoelectrochemical water splitting

KW - underlayer

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U2 - 10.1002/adma.201104868

DO - 10.1002/adma.201104868

M3 - مقالة

SN - 0935-9648

VL - 24

SP - 2699

EP - 2702

JO - Advanced Materials

JF - Advanced Materials

IS - 20

ER -

Enhancement in the performance of ultrathin hematite photoanode for water splitting by an oxide underlayer

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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