Abstract
A 2-nm thick Nb 2O 5 underlayer deposited by atomic layer deposition increases the charge separation efficiency and the photovoltage of ultrathin hematite films by suppressing electron back injection. Absorbed photon-to-current efficiencies (APCE) as high as 40%, which are one of the highest ever reported with hematite photoanodes, are obtained at 400 nm at +1.43 V vs. RHE.
Original language | English |
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Pages (from-to) | 2699-2702 |
Number of pages | 4 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 20 |
DOIs | |
State | Published - 22 May 2012 |
Keywords
- electron back injection
- hematite
- niobium oxide
- photoelectrochemical water splitting
- underlayer
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science