Enhanced quantum nano-sources based on silicon-vacancy centers in epitaxially grown diamond nano-pyramids

Tzach Jaffe, Nina Felgen, Lior Gal, Lior Kornblum, Cyril Popov, Johann Peter Reithmaier, Meir Orenstein

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.

Original languageEnglish
Title of host publication2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
ISBN (Electronic)9781728104690
DOIs
StatePublished - Jun 2019
Event2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich, Germany
Duration: 23 Jun 201927 Jun 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Conference

Conference2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Country/TerritoryGermany
CityMunich
Period23/06/1927/06/19

All Science Journal Classification (ASJC) codes

  • Spectroscopy
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

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