Enhanced quantum nano-sources based on silicon-vacancy centers in epitaxially grown diamond nano-pyramids

Tzach Jaffe, Nina Felgen, Lior Gal, Lior Kornblum, Cyril Popov, Johann Peter Reithmaier, Meir Orenstein

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.

Original languageEnglish
Title of host publicationThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019
StatePublished - 2019
EventThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019 - Munich, Germany
Duration: 23 Jun 201927 Jun 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F140-CLEO_Europe 2019

Conference

ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019
Country/TerritoryGermany
CityMunich
Period23/06/1927/06/19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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