TY - GEN
T1 - Energy-efficient phase change memory programming by nanosecond pulses
AU - Yalon, Eilam
AU - Okabe, Kye
AU - Neumann, Christopher M.
AU - Wong, H. S.Philip
AU - Pop, Eric
N1 - Publisher Copyright: © 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - Phase change memory (PCM) is an important storage-class memory technology and a promising candidate for neuromorphic applications. PCM is based on the reversible resistance change in chalcogenide glasses, like Ge2Sb2Te5 (GST), which can be induced with Joule heating pulses. However, PCM often suffers from large programming energy during the reset (amorphization) process which requires heating the chalcogenide above its melting temperature (Tm ~600 °C). Recently, significant reductions in reset energy were achieved by scaling down cell dimensions thanks to the non-filamentary nature of PCM [1].
AB - Phase change memory (PCM) is an important storage-class memory technology and a promising candidate for neuromorphic applications. PCM is based on the reversible resistance change in chalcogenide glasses, like Ge2Sb2Te5 (GST), which can be induced with Joule heating pulses. However, PCM often suffers from large programming energy during the reset (amorphization) process which requires heating the chalcogenide above its melting temperature (Tm ~600 °C). Recently, significant reductions in reset energy were achieved by scaling down cell dimensions thanks to the non-filamentary nature of PCM [1].
UR - http://www.scopus.com/inward/record.url?scp=85053182113&partnerID=8YFLogxK
U2 - 10.1109/DRC.2018.8443164
DO - 10.1109/DRC.2018.8443164
M3 - منشور من مؤتمر
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -