Electrostatic modulation of the lateral carrier density profile in field effect devices with non-linear dielectrics

Eylon Persky, Hyeok Yoon, Yanwu Xie, Harold Y Hwang, Jonathan Ruhman, Beena Kalisky

Research output: Working paperPreprint

Abstract

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model the electrostatics of the system. The electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near the edges, compared to the center of the device. This effect strongly depends on the dimensions of the device, and the non-linear dielectric constant of the substrate. We experimentally demonstrate this effect using scanning superconducting interference device (SQUID) microscopy images of current distributions in gated LaAlO3/SrTiO3 heterostructures.
Original languageEnglish
Number of pages6
StatePublished - 3 Mar 2020

Publication series

NamearXiv preprint arXiv:2003.01756

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