Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay; Adi Schlesinger; Uri Argaman; Long Nguyen; Nitzan Maman; Bar Koren; Meital Ozeri; Guy Makov; Yuval Golan; Doron Azulay

doi:10.1021/acsami.2c22134

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay, Adi Schlesinger, Uri Argaman, Long Nguyen, Nitzan Maman, Bar Koren, Meital Ozeri, Guy Makov, Yuval Golan, Doron Azulay

Ben-Gurion University of the Negev, The Hebrew University of Jerusalem

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

Original language	American English
Pages (from-to)	15668-15675
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	12
DOIs	https://doi.org/10.1021/acsami.2c22134
State	Published - 29 Mar 2023

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SDG 7 Affordable and Clean Energy

Keywords

SnSe
electrical properties
solution deposition
thin films
ultranarrow band gap

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/acsami.2c22134

Cite this

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abstract = "We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.",

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AU - Zakay, Noy

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AU - Argaman, Uri

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AU - Maman, Nitzan

AU - Koren, Bar

AU - Ozeri, Meital

AU - Makov, Guy

AU - Golan, Yuval

AU - Azulay, Doron

PY - 2023/3/29

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AB - We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

KW - SnSe

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KW - solution deposition

KW - thin films

KW - ultranarrow band gap

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Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Abstract

UN SDGs

Keywords

All Science Journal Classification (ASJC) codes

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