Effective n-type doping of monolayer MoS2 by AlOx

Connor J. McClellan; Eilam Yalon; Kirby K.H. Smithe; Saurabh V. Suryavanshi; Eric Pop

doi:10.1109/DRC.2017.7999392

Effective n-type doping of monolayer MoS₂ by AlO_x

Connor J. McClellan, Eilam Yalon, Kirby K.H. Smithe, Saurabh V. Suryavanshi, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Doping of two-dimensional (2D) semiconductors often utilizes charge transfer techniques that are not compatible with standard CMOS fabrication and are unstable over time. Sub-stoichiometric oxides have demonstrated stable 2D material doping [1], but often degrade the subthreshold swing (S) and current on/off ratio (I_max/I_min) of a device. Here, we demonstrate that AlOx can n-dope monolayer (1L) MoS2 while preserving Imax/Imin and S. The AlO_x doping significantly reduces the contact resistance (to 480 Ω·μm) while preserving the mobility (∼34 cm²V^-1s^-1) and S, ultimately achieving record on-current of 700 μA/μm for a monolayer semiconductor. We also present a model for the effect of interface traps on the transfer characteristics, which explains the experimentally obtained results.

Original language	English
Title of host publication	75th Annual Device Research Conference, DRC 2017
ISBN (Electronic)	9781509063277
DOIs	https://doi.org/10.1109/DRC.2017.7999392
State	Published - 1 Aug 2017
Externally published	Yes
Event	75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: 25 Jun 2017 → 28 Jun 2017

Publication series

Name	Device Research Conference - Conference Digest, DRC

Conference

Conference	75th Annual Device Research Conference, DRC 2017
Country/Territory	United States
City	South Bend
Period	25/06/17 → 28/06/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2017.7999392

Cite this

@inproceedings{07798923634b409482decf5b053b4bc5,

title = "Effective n-type doping of monolayer MoS2 by AlOx",

abstract = "Doping of two-dimensional (2D) semiconductors often utilizes charge transfer techniques that are not compatible with standard CMOS fabrication and are unstable over time. Sub-stoichiometric oxides have demonstrated stable 2D material doping [1], but often degrade the subthreshold swing (S) and current on/off ratio (Imax/Imin) of a device. Here, we demonstrate that AlOx can n-dope monolayer (1L) MoS2 while preserving Imax/Imin and S. The AlOx doping significantly reduces the contact resistance (to 480 Ω·μm) while preserving the mobility (∼34 cm2V-1s-1) and S, ultimately achieving record on-current of 700 μA/μm for a monolayer semiconductor. We also present a model for the effect of interface traps on the transfer characteristics, which explains the experimentally obtained results.",

author = "McClellan, {Connor J.} and Eilam Yalon and Smithe, {Kirby K.H.} and Suryavanshi, {Saurabh V.} and Eric Pop",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 75th Annual Device Research Conference, DRC 2017 ; Conference date: 25-06-2017 Through 28-06-2017",

year = "2017",

month = aug,

day = "1",

doi = "10.1109/DRC.2017.7999392",

language = "الإنجليزيّة",

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TY - GEN

T1 - Effective n-type doping of monolayer MoS2 by AlOx

AU - McClellan, Connor J.

AU - Yalon, Eilam

AU - Smithe, Kirby K.H.

AU - Suryavanshi, Saurabh V.

AU - Pop, Eric

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Doping of two-dimensional (2D) semiconductors often utilizes charge transfer techniques that are not compatible with standard CMOS fabrication and are unstable over time. Sub-stoichiometric oxides have demonstrated stable 2D material doping [1], but often degrade the subthreshold swing (S) and current on/off ratio (Imax/Imin) of a device. Here, we demonstrate that AlOx can n-dope monolayer (1L) MoS2 while preserving Imax/Imin and S. The AlOx doping significantly reduces the contact resistance (to 480 Ω·μm) while preserving the mobility (∼34 cm2V-1s-1) and S, ultimately achieving record on-current of 700 μA/μm for a monolayer semiconductor. We also present a model for the effect of interface traps on the transfer characteristics, which explains the experimentally obtained results.

AB - Doping of two-dimensional (2D) semiconductors often utilizes charge transfer techniques that are not compatible with standard CMOS fabrication and are unstable over time. Sub-stoichiometric oxides have demonstrated stable 2D material doping [1], but often degrade the subthreshold swing (S) and current on/off ratio (Imax/Imin) of a device. Here, we demonstrate that AlOx can n-dope monolayer (1L) MoS2 while preserving Imax/Imin and S. The AlOx doping significantly reduces the contact resistance (to 480 Ω·μm) while preserving the mobility (∼34 cm2V-1s-1) and S, ultimately achieving record on-current of 700 μA/μm for a monolayer semiconductor. We also present a model for the effect of interface traps on the transfer characteristics, which explains the experimentally obtained results.

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U2 - 10.1109/DRC.2017.7999392

DO - 10.1109/DRC.2017.7999392

M3 - منشور من مؤتمر

T3 - Device Research Conference - Conference Digest, DRC

BT - 75th Annual Device Research Conference, DRC 2017

T2 - 75th Annual Device Research Conference, DRC 2017

Y2 - 25 June 2017 through 28 June 2017

ER -