Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100)

Taissia Rudnikov-Keinan, Vladimir Ezersky, Nitzan Maman, Yuval Golan

Research output: Contribution to journalArticlepeer-review

Abstract

Lead sulfide (PbS) thin films were deposited from a solution onto chemically etched GaAs substrates. The substrates were etched using two different chemical etchants, citric acid and phosphorous acid, resulting in different substrate roughness values from 0.4 nm up to 6.2 nm. In both cases, etching resulted in the simultaneous exposure of (100), (111), and (311) microfacets. These different substrate conditions had a strong impact on the morphology and microstructure of the PbS films. This work provides the first reported evidence for PbS thin films deposited onto GaAs(311) microfacets with {113}/⟨110⟩ twinning relations.

Original languageAmerican English
Pages (from-to)5314-5322
Number of pages9
JournalCrystal Growth and Design
Volume23
Issue number7
DOIs
StatePublished - 5 Jul 2023

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Materials Science

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