Effect of hydrogen on the chemical bonding and band structure at the Al 2O 3/In 0.53Ga 0.47As interface

Pini Shekhter; Lior Kornblum; Zuoguang Liu; Sharon Cui; T. P. Ma; Moshe Eizenberg

doi:10.1063/1.3664778

Effect of hydrogen on the chemical bonding and band structure at the Al ₂O ₃/In _0.53Ga _0.47As interface

Pini Shekhter, Lior Kornblum, Zuoguang Liu, Sharon Cui, T. P. Ma, Moshe Eizenberg

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al ₂O ₃ with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al ₂O ₃ is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.

Original language	English
Article number	232103
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3664778
State	Published - 5 Dec 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3664778

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title = "Effect of hydrogen on the chemical bonding and band structure at the Al 2O 3/In 0.53Ga 0.47As interface",

abstract = "Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al 2O 3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al 2O 3 is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.",

author = "Pini Shekhter and Lior Kornblum and Zuoguang Liu and Sharon Cui and Ma, \{T. P.\} and Moshe Eizenberg",

year = "2011",

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doi = "10.1063/1.3664778",

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volume = "99",

journal = "Applied Physics Letters",

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T1 - Effect of hydrogen on the chemical bonding and band structure at the Al 2O 3/In 0.53Ga 0.47As interface

AU - Shekhter, Pini

AU - Kornblum, Lior

AU - Liu, Zuoguang

AU - Cui, Sharon

AU - Ma, T. P.

AU - Eizenberg, Moshe

PY - 2011/12/5

Y1 - 2011/12/5

N2 - Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al 2O 3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al 2O 3 is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.

AB - Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al 2O 3 with different passivations were investigated by x-ray photoelectron spectroscopy. Pre-deposition forming gas plasma treatment is shown to significantly improve the chemistry of S-passivated InGaAs surface, on which the Al 2O 3 is deposited by the molecular atomic deposition technique. Moreover, the change in the surface chemistry was found to correlate with a difference of 0.8 eV in the band offsets at the interface. This may offer insights on Fermi level pinning in such systems.

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DO - 10.1063/1.3664778

M3 - مقالة

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232103

ER -

Effect of hydrogen on the chemical bonding and band structure at the Al ₂O ₃/In _0.53Ga _0.47As interface

Abstract

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