Effect of GaAs Substrate Micropatterning on Threading Dislocation Density in Solution-Deposited Lead Sulfide Thin Films

Keyphrases

• Film Thickness 100%
• Threading Dislocation Density 100%
• Micropatterning 100%
• Lead Sulfide Films 100%
• GaAs Substrate 100%
• Limited Growth 66%
• Microstructure 33%
• Chemical Deposition 33%
• Film Morphology 33%
• Structural Defects 33%
• PbS Thin Films 33%
• Lateral Diffusion 33%
• Defect Density 33%
• Crystal Phase 33%
• Phase Defect 33%
• GaAs(100) 33%
• Chemical Etching 33%
• Patterned Substrate 33%
• Deposition Mechanism 33%
• Lead Sulfide 33%
• Constrained Environment 33%
• Threading Dislocation 33%
• Growth Areas 33%
• Material Quality 33%
• GaAs (111)A Substrate 33%
• Crystal Quality 33%
• Thin Film Materials 33%
• Solution Deposition 33%
• Etching Parameters 33%
• Crystal Structural 33%
• Film Continuity 33%
• Substrate Patterning 33%
• Semiconductor Growth 33%

Engineering

• Thin Films 100%
• Dislocation Density 100%
• Threading Dislocation 100%
• Gaas Substrate 100%
• Gallium Arsenide 50%
• Structural Defect 25%
• Film Material 25%
• Defect Density 25%
• Material Quality 25%
• Crystalline Quality 25%
• Chemical Deposition 25%
• Deposition Mechanism 25%

Material Science

• Density 100%
• Thin Films 100%
• Gallium Arsenide 100%
• Film Thickness 100%
• Film 33%
• Crystalline Material 33%
• Defect Density 33%
• Semiconductor Growth 33%
• Chemical Etching 33%