Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

Sushrut Modak; Leonid Chernyak; Sergey Khodorov; Igor Lubomirsky; Arie Ruzin; Minghan Xian; Fan Ren; Stephen J. Pearton

doi:10.1149/2162-8777/ab902b

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga₂O₃ Schottky Rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, Minghan Xian, Fan Ren, Stephen J. Pearton

Weizmann Institute of Science, Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10¹⁴ cm^-2) Si-doped β-Ga₂O₃ Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga₂O₃ Schottky rectifiers is presented.

Original language	English
Article number	045018
Number of pages	4
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	4
DOIs	https://doi.org/10.1149/2162-8777/ab902b
State	Published - 5 Jan 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/ab902b

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title = "Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers",

abstract = "We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.",

author = "Sushrut Modak and Leonid Chernyak and Sergey Khodorov and Igor Lubomirsky and Arie Ruzin and Minghan Xian and Fan Ren and Pearton, \{Stephen J.\}",

note = "Publisher Copyright: {\textcopyright} 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.",

year = "2020",

month = jan,

day = "5",

doi = "10.1149/2162-8777/ab902b",

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T1 - Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Khodorov, Sergey

AU - Lubomirsky, Igor

AU - Ruzin, Arie

AU - Xian, Minghan

AU - Ren, Fan

AU - Pearton, Stephen J.

PY - 2020/1/5

Y1 - 2020/1/5

N2 - We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.

AB - We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014 cm-2) Si-doped β-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 C to 289 nm at 120 C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β-Ga2O3 Schottky rectifiers is presented.

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U2 - 10.1149/2162-8777/ab902b

DO - 10.1149/2162-8777/ab902b

M3 - مقالة

SN - 2162-8769

VL - 9

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 4

M1 - 045018

ER -

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga₂O₃ Schottky Rectifiers

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