Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors

A. Yadav; C. Schwarz; M. Shatkhin; L. Wang; E. Flitsiyan; L. Chernyak; L. Lu; Y. H. Hwang; F. Ren; S. J. Pearton; I. Lubomirsky

doi:https://doi.org/10.1149/06104.0171ecst

Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors

A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak, L. Lu, Y. H. Hwang, F. Ren, S. J. Pearton, I. Lubomirsky

Department of Molecular Chemistry and Materials Science Perlman

Weizmann Institute of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

AlGaN/GaN High Electron Mobility Transistors were irradiated with Co-60 gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200 degrees C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

Original language	English
Title of host publication	WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15
Editors	F Ren, YL Wang, S Jang, SJ Pearton, EB Stokes, J Kim
Publisher	The Electrochemical Society
Pages	171-177
Number of pages	7
DOIs	https://doi.org/10.1149/06104.0171ecst
State	Published - 2014
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 Held during the 225th Meeting of the Electrochemical-Society - Orlando Duration: 11 May 2014 → 15 May 2014

Publication series

Name	ECS Transactions
Number	4
Volume	61
ISSN (Print)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 Held during the 225th Meeting of the Electrochemical-Society
City	Orlando
Period	11/05/14 → 15/05/14

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Yadav, A., Schwarz, C., Shatkhin, M., Wang, L., Flitsiyan, E., Chernyak, L., Lu, L., Hwang, Y. H., Ren, F., Pearton, S. J., & Lubomirsky, I. (2014). Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors. In F. Ren, YL. Wang, S. Jang, SJ. Pearton, EB. Stokes, & J. Kim (Eds.), WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15 (pp. 171-177). (ECS Transactions; Vol. 61, No. 4). The Electrochemical Society. https://doi.org/10.1149/06104.0171ecst

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title = "Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors",

abstract = "AlGaN/GaN High Electron Mobility Transistors were irradiated with Co-60 gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200 degrees C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.",

author = "A. Yadav and C. Schwarz and M. Shatkhin and L. Wang and E. Flitsiyan and L. Chernyak and L. Lu and Hwang, {Y. H.} and F. Ren and Pearton, {S. J.} and I. Lubomirsky",

note = "UCF research was partially supported by NATO SfP #984662. The work performed at UF is supported by an U.S. DOD HDTRA Grant No. 1-11-1-0020, monitored by Dr. James Reed.; Symposium on Wide Bandgap Semiconductor Materials and Devices 15 Held during the 225th Meeting of the Electrochemical-Society ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "https://doi.org/10.1149/06104.0171ecst",

language = "الإنجليزيّة",

series = "ECS Transactions",

publisher = "The Electrochemical Society",

number = "4",

pages = "171--177",

editor = "F Ren and YL Wang and S Jang and SJ Pearton and EB Stokes and J Kim",

booktitle = "WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15",

address = "الولايات المتّحدة",

}

Yadav, A, Schwarz, C, Shatkhin, M, Wang, L, Flitsiyan, E, Chernyak, L, Lu, L, Hwang, YH, Ren, F, Pearton, SJ & Lubomirsky, I 2014, Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors. in F Ren, YL Wang, S Jang, SJ Pearton, EB Stokes & J Kim (eds), WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15. ECS Transactions, no. 4, vol. 61, The Electrochemical Society, pp. 171-177, Symposium on Wide Bandgap Semiconductor Materials and Devices 15 Held during the 225th Meeting of the Electrochemical-Society, Orlando, 11/05/14. https://doi.org/10.1149/06104.0171ecst

Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors. / Yadav, A.; Schwarz, C.; Shatkhin, M. et al.
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15. ed. / F Ren; YL Wang; S Jang; SJ Pearton; EB Stokes; J Kim. The Electrochemical Society, 2014. p. 171-177 (ECS Transactions; Vol. 61, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors

AU - Yadav, A.

AU - Schwarz, C.

AU - Shatkhin, M.

AU - Wang, L.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Lu, L.

AU - Hwang, Y. H.

AU - Ren, F.

AU - Pearton, S. J.

AU - Lubomirsky, I.

N1 - UCF research was partially supported by NATO SfP #984662. The work performed at UF is supported by an U.S. DOD HDTRA Grant No. 1-11-1-0020, monitored by Dr. James Reed.

PY - 2014

Y1 - 2014

N2 - AlGaN/GaN High Electron Mobility Transistors were irradiated with Co-60 gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200 degrees C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

AB - AlGaN/GaN High Electron Mobility Transistors were irradiated with Co-60 gamma-ray doses from 100 Gy up to a maximum dose of 1000 Gy. After irradiation, the devices were annealed at 200 degrees C for 25 minutes. Annealing of the gamma irradiated transistors show that partial recovery of device performance is possible at this temperature. The impact of irradiation and annealing on minority carrier diffusion length and activation energy were monitored through the use of the Electron Beam Induced Current method. Impact on transfer, gate, and drain characteristics were analyzed through current-voltage measurements.

U2 - https://doi.org/10.1149/06104.0171ecst

DO - https://doi.org/10.1149/06104.0171ecst

M3 - منشور من مؤتمر

T3 - ECS Transactions

SP - 171

EP - 177

BT - WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15

A2 - Ren, F

A2 - Wang, YL

A2 - Jang, S

A2 - Pearton, SJ

A2 - Stokes, EB

A2 - Kim, J

PB - The Electrochemical Society

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 Held during the 225th Meeting of the Electrochemical-Society

Y2 - 11 May 2014 through 15 May 2014

ER -

Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L et al. Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors. In Ren F, Wang YL, Jang S, Pearton SJ, Stokes EB, Kim J, editors, WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15. The Electrochemical Society. 2014. p. 171-177. (ECS Transactions; 4). doi: https://doi.org/10.1149/06104.0171ecst

Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors

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