Edge effect in ohmic contacts on high-resistivity semiconductors

Arie Ruzin

doi:10.1016/j.nima.2015.10.063

Edge effect in ohmic contacts on high-resistivity semiconductors

Arie Ruzin

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

Original language	English
Pages (from-to)	356-359
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	806
DOIs	https://doi.org/10.1016/j.nima.2015.10.063
State	Published - 11 Jan 2016

Keywords

CdZnTe
Detector
Edge-effect
Simulation

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2015.10.063

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title = "Edge effect in ohmic contacts on high-resistivity semiconductors",

abstract = "Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.",

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AU - Ruzin, Arie

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Y1 - 2016/1/11

N2 - Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

AB - Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

KW - CdZnTe

KW - Detector

KW - Edge-effect

KW - Simulation

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U2 - 10.1016/j.nima.2015.10.063

DO - 10.1016/j.nima.2015.10.063

M3 - مقالة

SN - 0168-9002

VL - 806

SP - 356

EP - 359

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Edge effect in ohmic contacts on high-resistivity semiconductors

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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