Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Muhammad Y. Bashouti; Kasra Sardashti; Juergen Ristein; Silke H. Christiansen

doi:10.1039/c2cp41709j

Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Muhammad Y. Bashouti, Kasra Sardashti, Juergen Ristein, Silke H. Christiansen

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

Original language	American English
Pages (from-to)	11877-11881
Number of pages	5
Journal	Physical Chemistry Chemical Physics
Volume	14
Issue number	34
DOIs	https://doi.org/10.1039/c2cp41709j
State	Published - 14 Sep 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1039/c2cp41709j

Cite this

@article{14ffe3cc09424d24a2e8f80ba3ba0fe6,

title = "Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy",

abstract = "Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is",

author = "Bashouti, \{Muhammad Y.\} and Kasra Sardashti and Juergen Ristein and Christiansen, \{Silke H.\}",

year = "2012",

month = sep,

day = "14",

doi = "10.1039/c2cp41709j",

language = "American English",

volume = "14",

pages = "11877--11881",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

number = "34",

}

TY - JOUR

T1 - Early stages of oxide growth in H-terminated silicon nanowires

T2 - Determination of kinetic behavior and activation energy

AU - Bashouti, Muhammad Y.

AU - Sardashti, Kasra

AU - Ristein, Juergen

AU - Christiansen, Silke H.

PY - 2012/9/14

Y1 - 2012/9/14

N2 - Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

AB - Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

UR - http://www.scopus.com/inward/record.url?scp=84865145665&partnerID=8YFLogxK

U2 - 10.1039/c2cp41709j

DO - 10.1039/c2cp41709j

M3 - Article

SN - 1463-9076

VL - 14

SP - 11877

EP - 11881

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 34

ER -

Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this