Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices

Shani Recher; Eilam Yalon; Dan Ritter; Ilan Riess; Joseph Salzman

doi:https://doi.org/10.1016/j.sse.2015.04.002

Dual bipolar resistive switching in the sub-forming regime of HfO₂ resistive switching devices

Shani Recher, Eilam Yalon, Dan Ritter, Ilan Riess, Joseph Salzman

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract Resistive switching in HfO₂ in the sub-forming regime (before an electroforming step had been fully performed) is studied by electrical measurements using a very low current compliance of 1 μA. Electroforming under low current limitation results in reduced self-heating and partial filament formation. Following the reset process in this sub-forming regime, the device fully recovers its pristine resistive state. Furthermore, a dual bipolar resistive switching (DBRS) effect is observed, which we model as two antiparallel bipolar resistive switches. We attribute this phenomenon to intermittent formation and rupture of filaments originating from opposite electrodes. Following the rupture of a filament, originating from one of the electrodes, another filament originating from the opposite electrode is formed.

Original language	English
Article number	6780
Pages (from-to)	238-242
Number of pages	5
Journal	Solid-State Electronics
Volume	111
DOIs	https://doi.org/10.1016/j.sse.2015.04.002
State	Published - 27 Sep 2015

Keywords

Forming
HfO
Resistive RAM

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

https://doi.org/10.1016/j.sse.2015.04.002

Cite this

@article{8e95ce9a818943889cdce26db5c983cb,

title = "Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices",

abstract = "Abstract Resistive switching in HfO2 in the sub-forming regime (before an electroforming step had been fully performed) is studied by electrical measurements using a very low current compliance of 1 μA. Electroforming under low current limitation results in reduced self-heating and partial filament formation. Following the reset process in this sub-forming regime, the device fully recovers its pristine resistive state. Furthermore, a dual bipolar resistive switching (DBRS) effect is observed, which we model as two antiparallel bipolar resistive switches. We attribute this phenomenon to intermittent formation and rupture of filaments originating from opposite electrodes. Following the rupture of a filament, originating from one of the electrodes, another filament originating from the opposite electrode is formed.",

keywords = "Forming, HfO, Resistive RAM",

author = "Shani Recher and Eilam Yalon and Dan Ritter and Ilan Riess and Joseph Salzman",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

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day = "27",

doi = "https://doi.org/10.1016/j.sse.2015.04.002",

language = "الإنجليزيّة",

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issn = "0038-1101",

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TY - JOUR

T1 - Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices

AU - Recher, Shani

AU - Yalon, Eilam

AU - Ritter, Dan

AU - Riess, Ilan

AU - Salzman, Joseph

PY - 2015/9/27

Y1 - 2015/9/27

N2 - Abstract Resistive switching in HfO2 in the sub-forming regime (before an electroforming step had been fully performed) is studied by electrical measurements using a very low current compliance of 1 μA. Electroforming under low current limitation results in reduced self-heating and partial filament formation. Following the reset process in this sub-forming regime, the device fully recovers its pristine resistive state. Furthermore, a dual bipolar resistive switching (DBRS) effect is observed, which we model as two antiparallel bipolar resistive switches. We attribute this phenomenon to intermittent formation and rupture of filaments originating from opposite electrodes. Following the rupture of a filament, originating from one of the electrodes, another filament originating from the opposite electrode is formed.

AB - Abstract Resistive switching in HfO2 in the sub-forming regime (before an electroforming step had been fully performed) is studied by electrical measurements using a very low current compliance of 1 μA. Electroforming under low current limitation results in reduced self-heating and partial filament formation. Following the reset process in this sub-forming regime, the device fully recovers its pristine resistive state. Furthermore, a dual bipolar resistive switching (DBRS) effect is observed, which we model as two antiparallel bipolar resistive switches. We attribute this phenomenon to intermittent formation and rupture of filaments originating from opposite electrodes. Following the rupture of a filament, originating from one of the electrodes, another filament originating from the opposite electrode is formed.

KW - Forming

KW - HfO

KW - Resistive RAM

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U2 - https://doi.org/10.1016/j.sse.2015.04.002

DO - https://doi.org/10.1016/j.sse.2015.04.002

M3 - مقالة

SN - 0038-1101

VL - 111

SP - 238

EP - 242

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 6780

ER -