Direct observation of power dissipation in monolayer MoS2 devices

Eilam Yalon; Connor J. Mcclellan; Kirby K.H. Smithe; Yong Cheol Shin; Runjie Xu; Eric Pop

doi:10.1109/DRC.2016.7676130

Direct observation of power dissipation in monolayer MoS2 devices

Eilam Yalon, Connor J. Mcclellan, Kirby K.H. Smithe, Yong Cheol Shin, Runjie Xu, Eric Pop

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We studied power dissipation in 1L MoS 2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS 2 -substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.

Original language	English
Title of host publication	2016 74th Annual Device Research Conference (DRC)
Pages	1-2
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2016.7676130
State	Published - 2016
Externally published	Yes

Access to Document

10.1109/DRC.2016.7676130

Cite this

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title = "Direct observation of power dissipation in monolayer MoS2 devices",

abstract = "We studied power dissipation in 1L MoS 2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS 2 -substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.",

author = "Eilam Yalon and Mcclellan, {Connor J.} and Smithe, {Kirby K.H.} and Shin, {Yong Cheol} and Runjie Xu and Eric Pop",

year = "2016",

doi = "10.1109/DRC.2016.7676130",

language = "الإنجليزيّة",

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booktitle = "2016 74th Annual Device Research Conference (DRC)",

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AU - Mcclellan, Connor J.

AU - Smithe, Kirby K.H.

AU - Shin, Yong Cheol

AU - Xu, Runjie

AU - Pop, Eric

PY - 2016

Y1 - 2016

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AB - We studied power dissipation in 1L MoS 2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS 2 -substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.

U2 - 10.1109/DRC.2016.7676130

DO - 10.1109/DRC.2016.7676130

M3 - منشور من مؤتمر

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EP - 2

BT - 2016 74th Annual Device Research Conference (DRC)

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