Direct measurement of nanowire Schottky junction depletion region

E. Koren; N. Berkovitch; O. Azriel; A. Boag; Y. Rosenwaks; E. R. Hemesath; L. J. Lauhon

doi:https://doi.org/10.1063/1.3665182

Direct measurement of nanowire Schottky junction depletion region

E. Koren, N. Berkovitch, O. Azriel, A. Boag, Y. Rosenwaks, E. R. Hemesath, L. J. Lauhon

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 10¹⁷cm^-3.

Original language	English
Article number	223511
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3665182
State	Published - 28 Nov 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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https://doi.org/10.1063/1.3665182

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title = "Direct measurement of nanowire Schottky junction depletion region",

abstract = "We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.",

author = "E. Koren and N. Berkovitch and O. Azriel and A. Boag and Y. Rosenwaks and Hemesath, {E. R.} and Lauhon, {L. J.}",

note = "Funding Information: This research was generously supported by Grant No. 2008140 from the United States-Israel Binational Science Foundation [BSF] and the National Science Foundation Grant DMR-1006069.",

year = "2011",

month = nov,

day = "28",

doi = "https://doi.org/10.1063/1.3665182",

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journal = "Applied Physics Letters",

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T1 - Direct measurement of nanowire Schottky junction depletion region

AU - Koren, E.

AU - Berkovitch, N.

AU - Azriel, O.

AU - Boag, A.

AU - Rosenwaks, Y.

AU - Hemesath, E. R.

AU - Lauhon, L. J.

N1 - Funding Information: This research was generously supported by Grant No. 2008140 from the United States-Israel Binational Science Foundation [BSF] and the National Science Foundation Grant DMR-1006069.

PY - 2011/11/28

Y1 - 2011/11/28

N2 - We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.

AB - We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.

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DO - https://doi.org/10.1063/1.3665182

M3 - مقالة

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223511

ER -

Direct measurement of nanowire Schottky junction depletion region

Abstract

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