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Direct band gap silicon quantum dots achieved via electronegative capping
A. N. Poddubny
, K. Dohnalová
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peer-review
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Chemistry
Quantum Dot
78%
Band Gap
66%
Radiative Transition
25%
Electrostatic Field
22%
Environment
20%
Surface Potential
19%
Electron Particle
19%
Density of State
18%
Ligand
15%
Excited State
14%
Semiconductor
13%
Simulation
11%
Modification
9%
Surface
5%
Engineering & Materials Science
Energy gap
100%
Silicon
69%
Ligands
46%
Electrons
35%
Excited states
29%
Surface potential
23%
Electric fields
16%
Semiconductor materials
15%
Physics & Astronomy
quantum dots
68%
silicon
47%
ligands
35%
promotion
21%
valleys
17%
electrons
14%
trends
13%
engineering
13%
electric fields
10%
excitation
8%
simulation
6%