Abstract
The most dominant reliability issue in resistive memories, often referred to as sneak-paths, can be modeled as interference of resistances in parallel to a measured resistance. For this special type of interference we develop efficient detection and coding schemes that are shown to effectively mitigate the effects of sneak-path errors.
| Original language | American English |
|---|---|
| Title of host publication | 2017 NVMW – Non-Volatile Memory Workshop |
| State | Published - 2017 |