Abstract
Resistive memory is a promising technology for achieving unprecedented storage densities and new in-memory computing features. However, to fulfill their promise, resistive memories require array architectures suffering from a severe interference effect called 'sneak paths.' In this paper, we address the sneak-path problem through a communication-theory framework. Starting from the fundamental problem of readout with parallel-resistance interference, we develop several tools for detection and coding that significantly improve memory reliability. For the detection problem, we formulate and derive the optimal detector for a realistic array model, and then propose simplifications that enjoy similarly good performance and simpler implementation. Complementing detection for better error rates is done by a new coding scheme that shapes the stored bits to get lower sneak-path incidence. For the same storage rates, the new coding scheme exhibits error rates lower by an order of magnitude compared to known shaping techniques.
| Original language | English |
|---|---|
| Article number | 8636491 |
| Pages (from-to) | 3821-3833 |
| Number of pages | 13 |
| Journal | IEEE Transactions on Communications |
| Volume | 67 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2019 |
Keywords
- Memristor
- bhattacharyya bound
- coding
- detection
- sneak-path
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering