Design optimization of laser-induced microbridges for low resistance interline connections in ICs

Kuan Jung Chung; Martin Peckerar; Joseph B. Bernstein

doi:https://doi.org/10.1016/j.mee.2012.08.028

Design optimization of laser-induced microbridges for low resistance interline connections in ICs

Kuan Jung Chung, Martin Peckerar, Joseph B. Bernstein

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we present a two-dimensional finite element (FE) model for laser beam-induced low-resistance lateral interconnects. We refer to these links as "Microbridges". The model allowed designers using different geometric parameters (interline spacing and the width-to-height ratio of metal lines) and metal-dielectric combination (Al/SiO₂) to optimize the design structure. The results of the FE analysis are consistent with the experimental results. An optimal design diagram for the Al/SiO₂ system is created to provide the best dimensional combinations exhibiting the widest process window and the best production yield.

Original language	English
Pages (from-to)	70-75
Number of pages	6
Journal	Microelectronic Engineering
Volume	103
DOIs	https://doi.org/10.1016/j.mee.2012.08.028
State	Published - Mar 2013
Externally published	Yes

Keywords

Design optimization
Finite element method
IC metalization
Laser-assisted microfabrication

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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https://doi.org/10.1016/j.mee.2012.08.028

Cite this

@article{bdc37d15faf2458aacbfbd9044b38ca5,

title = "Design optimization of laser-induced microbridges for low resistance interline connections in ICs",

abstract = "In this work, we present a two-dimensional finite element (FE) model for laser beam-induced low-resistance lateral interconnects. We refer to these links as {"}Microbridges{"}. The model allowed designers using different geometric parameters (interline spacing and the width-to-height ratio of metal lines) and metal-dielectric combination (Al/SiO2) to optimize the design structure. The results of the FE analysis are consistent with the experimental results. An optimal design diagram for the Al/SiO2 system is created to provide the best dimensional combinations exhibiting the widest process window and the best production yield.",

keywords = "Design optimization, Finite element method, IC metalization, Laser-assisted microfabrication",

author = "Chung, {Kuan Jung} and Martin Peckerar and Bernstein, {Joseph B.}",

year = "2013",

month = mar,

doi = "https://doi.org/10.1016/j.mee.2012.08.028",

language = "الإنجليزيّة",

volume = "103",

pages = "70--75",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Design optimization of laser-induced microbridges for low resistance interline connections in ICs

AU - Chung, Kuan Jung

AU - Peckerar, Martin

AU - Bernstein, Joseph B.

PY - 2013/3

Y1 - 2013/3

N2 - In this work, we present a two-dimensional finite element (FE) model for laser beam-induced low-resistance lateral interconnects. We refer to these links as "Microbridges". The model allowed designers using different geometric parameters (interline spacing and the width-to-height ratio of metal lines) and metal-dielectric combination (Al/SiO2) to optimize the design structure. The results of the FE analysis are consistent with the experimental results. An optimal design diagram for the Al/SiO2 system is created to provide the best dimensional combinations exhibiting the widest process window and the best production yield.

AB - In this work, we present a two-dimensional finite element (FE) model for laser beam-induced low-resistance lateral interconnects. We refer to these links as "Microbridges". The model allowed designers using different geometric parameters (interline spacing and the width-to-height ratio of metal lines) and metal-dielectric combination (Al/SiO2) to optimize the design structure. The results of the FE analysis are consistent with the experimental results. An optimal design diagram for the Al/SiO2 system is created to provide the best dimensional combinations exhibiting the widest process window and the best production yield.

KW - Design optimization

KW - Finite element method

KW - IC metalization

KW - Laser-assisted microfabrication

UR - http://www.scopus.com/inward/record.url?scp=84869873736&partnerID=8YFLogxK

U2 - https://doi.org/10.1016/j.mee.2012.08.028

DO - https://doi.org/10.1016/j.mee.2012.08.028

M3 - مقالة

SN - 0167-9317

VL - 103

SP - 70

EP - 75

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Design optimization of laser-induced microbridges for low resistance interline connections in ICs

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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