@inproceedings{de740f2e07fd49e08d1389279c7e2c3b,
title = "Design considerations for GaN based converters",
abstract = "Wide bandgap devices permits power converters designer to accomplish new levels of efficiency, power density and improve reliability. Today Gallium-Nitride transistors are the sharp edge for any new power converters and inverters design. However, the new technology bring-out new boundaries for designers especially in terms of available switching speed. In this paper performance analysis of Gallium-Nitride transistors is presented. Begin with understating the electrical model of Gallium-Nitride transistors, comprehend its behavior focusing on the parasitic elements and theirs power dissipations, then the inherit constrains on operating frequency upper boundary of basic switch, boost and buck converters. And last, case study of finding the upper switching frequencies boundaries for EPC Gallium-Nitride transistors family.",
keywords = "Gallium-Nitride, Power converters, Switching frequencies boundaries, Wide bandgap devices",
author = "Ilan Aharon and Moshe Sitbon and Joseph Bernstein",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 8th International Conference on Renewable Energy Research and Applications, ICRERA 2019 ; Conference date: 03-11-2019 Through 06-11-2019",
year = "2019",
month = nov,
doi = "10.1109/ICRERA47325.2019.8997080",
language = "الإنجليزيّة",
series = "8th International Conference on Renewable Energy Research and Applications, ICRERA 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "489--493",
booktitle = "8th International Conference on Renewable Energy Research and Applications, ICRERA 2019",
address = "الولايات المتّحدة",
}