Abstract
An in-depth understanding of the growth mechanism of Cu2-xS−MoS2 grown in a one-pot synthesis using colloidal chemistry was demonstrated. The obtained structures are stabilized by leaching of Cu ions to the interface with the MoS2, thus creating an improved MoS2 surface for hydrogen evolution. In addition, the formation of the 1T phase is accompanied by a substantial difference in the electronic structure, which is a possible factor in the growth mechanism and the arrested growth of additional MoS2 layers. The atomic scale structural analysis provides the indispensable insights into the growth process and the origin of the macroscopic properties, which were supported by the DFT calculations.
| Original language | American English |
|---|---|
| Pages (from-to) | 4489-4492 |
| Number of pages | 4 |
| Journal | Chemistry of Materials |
| Volume | 30 |
| Issue number | 14 |
| DOIs | |
| State | Published - 24 Jul 2018 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Chemical Engineering
- Materials Chemistry
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