Skip to main navigation Skip to search Skip to main content

Correlation between Raman scattering and conductance in a molecular junction

Research output: Contribution to journalArticlepeer-review

Abstract

Using a generic model of a current-carrying molecular junction we discuss, for the first time, correlations between Raman flux and electrical conductance. A mechanism alternative to molecular motion is proposed for these experimentally detected correlations. Numerical simulations based on realistic estimates of molecular junction parameters suggest that the effect should be observable.

Original languageEnglish
Article number27001
JournalEurophysics Letters
Volume95
Issue number2
DOIs
StatePublished - Jul 2011
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Correlation between Raman scattering and conductance in a molecular junction'. Together they form a unique fingerprint.

Cite this