Continuous electrical tuning of the chemical composition of TaO x-based memristors

Feng Miao, Wei Yi, Ilan Goldfarb, J. Joshua Yang, Min Xian Zhang, Matthew D. Pickett, John Paul Strachan, Gilberto Medeiros-Ribeiro, R. Stanley Williams

Research output: Contribution to journalArticlepeer-review


TaO x-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO x memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.

Original languageEnglish
Pages (from-to)2312-2318
Number of pages7
JournalACS Nano
Issue number3
StatePublished - 27 Mar 2012
Externally publishedYes


  • chemical composition
  • conduction channel
  • memristor
  • multilevel storage
  • state variable

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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