Contact size-dependent switching instabilities in HfO2 RRAM

Pavel Baikov; Kamalakannan Ranganathan; Ilan Goldfarb; Arie Ruzin

doi:10.1007/s10854-022-09002-1

Contact size-dependent switching instabilities in HfO₂ RRAM

Pavel Baikov, Kamalakannan Ranganathan, Ilan Goldfarb, Arie Ruzin

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfO_x-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.

Original language	English
Pages (from-to)	22230-22243
Number of pages	14
Journal	Journal of Materials Science: Materials in Electronics
Volume	33
Issue number	28
DOIs	https://doi.org/10.1007/s10854-022-09002-1
State	Published - Oct 2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-022-09002-1

Cite this

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title = "Contact size-dependent switching instabilities in HfO2 RRAM",

abstract = "A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfOx-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.",

author = "Pavel Baikov and Kamalakannan Ranganathan and Ilan Goldfarb and Arie Ruzin",

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AU - Ranganathan, Kamalakannan

AU - Goldfarb, Ilan

AU - Ruzin, Arie

PY - 2022/10

Y1 - 2022/10

N2 - A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfOx-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.

AB - A comprehensive understanding of the resistive switching mechanisms that activate REDOX-based random access memory devices is necessary to further enhance their performance and reliability. In this article, devices of two different sizes were fabricated by magnetron sputtering and tested by potential sweeps and pulses. Reproducible memristive characteristics for HfOx-based devices were obtained. The contact geometry was shown to play a critical role in the process dynamics and device characteristics. Moderate to high ON/OFF ratios were obtained for all the devices. All the devices exhibited bipolar memristive behavior consistent with combined electric field and temperature-dependent oxygen migration in the filament formation mechanism.

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

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