@inproceedings{eda13111ab3943fbaee6aad28bc59675,
title = "Contact engineering in vertical hybrid field effect transistor",
abstract = "Here we report a Vertical Hybrid Field Effect Transistor (VHFET) that shows an improved saturated output characteristics. Up till today the injection limited regime in vertical transistor was realized using an injection barrier as well as a buried semiconductor (SC) under the source contact. Using previous reported simulations and a new fabrication technique we successfully fabricated and characterized a functional device which operates at the injection limited regime without the need of a current limited source injection barrier. The new architecture shows better gate control with 5 {\texttrademark} 105 on/off ratio and 240 mV/dec subthreshold swing. Furthermore, we can set design rules for the vertical source contact to enable high performance Vertical Field Effect Transistors (VFET), some of which are applicable to any short-channel transistor.",
keywords = "Amorphous Metal Oxide, Contact engineering, IGZO, Organic material, Thin Film Transistor, Vertical Hybrid Field Effect Transistor, low-cost high-performance",
author = "Gil Sheleg and Nir Tessler",
note = "Publisher Copyright: {\textcopyright} 2020 SPIE.; Organic and Hybrid Field-Effect Transistors XIX 2020 ; Conference date: 24-08-2020 Through 04-09-2020",
year = "2020",
doi = "10.1117/12.2570138",
language = "الإنجليزيّة",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
editor = "Iain McCulloch and Jurchescu, {Oana D.}",
booktitle = "Organic and Hybrid Field-Effect Transistors XIX",
}